saikin84
Structural
- Apr 6, 2007
- 4
Hello, I want to simulate the stress-strain state of silicon chip with thin dielectric membrane. The process of manufacturing includes:
1 substrate, 400 um
2 oxidizing, 0.5 um
3 nitride deposition, 0.5 um
4 Al deposition, 0.5 um
5 deep silicon etch, 400 um
The sizes of chip - rectangle 4x4 mm, membrane rectangle - 2mm. All dimensions are conditional
First I assume that stresses in membrane are too small to introduce strains in silicon and simulate only membrane (it is to be reviewed after i get the results).
Next, for this kind of problems Ansys documentation tells me to use the Element Birth & Death. But the membrane should consist of shell elements and I have no idea how to stack several layers of shell elements.
So I come to use of layered shells like shell91 or solsh190 and activating the TB,KINH like in the article .
The question is - am I right, or missing something?
1 substrate, 400 um
2 oxidizing, 0.5 um
3 nitride deposition, 0.5 um
4 Al deposition, 0.5 um
5 deep silicon etch, 400 um
The sizes of chip - rectangle 4x4 mm, membrane rectangle - 2mm. All dimensions are conditional
First I assume that stresses in membrane are too small to introduce strains in silicon and simulate only membrane (it is to be reviewed after i get the results).
Next, for this kind of problems Ansys documentation tells me to use the Element Birth & Death. But the membrane should consist of shell elements and I have no idea how to stack several layers of shell elements.
So I come to use of layered shells like shell91 or solsh190 and activating the TB,KINH like in the article .
The question is - am I right, or missing something?