zacks01
Electrical
- May 25, 2008
- 1
Hello all,
I'm new here to eng-tips.com website. I have a question regarding PECVD ( Plasma Enhanced Chemical Vapor Deposition).
How to obtain high refractive index with knowing the ratio of combination of gas SiH4 & N2O in terms of flow rate (sccm) ? I'm trying to grow a SiO ( silicon oxide) layer on a wafer to obtain a high refractive index.
Meaning, how much gas flow (sccm) which combination will give out high refractive index, preferably to get around 1.5?
I've tried 150:450 for SiH4:N2, but the highest I can get for refractive index is 1.42.
Appreciate your help. Thank you.
Regards,
Zacks
I'm new here to eng-tips.com website. I have a question regarding PECVD ( Plasma Enhanced Chemical Vapor Deposition).
How to obtain high refractive index with knowing the ratio of combination of gas SiH4 & N2O in terms of flow rate (sccm) ? I'm trying to grow a SiO ( silicon oxide) layer on a wafer to obtain a high refractive index.
Meaning, how much gas flow (sccm) which combination will give out high refractive index, preferably to get around 1.5?
I've tried 150:450 for SiH4:N2, but the highest I can get for refractive index is 1.42.
Appreciate your help. Thank you.
Regards,
Zacks