electricuwe - no problem, I appreciate your last response. I did not state the application up front but I did mention that "easy paralleling" was a must for the discretes. At any rate, the application is a series wound DC traction motor controller that does regen (a 2 quadrant drive, in other words). I know from experience that even getting more than a few mosfets to switch on and off at the same time (despite the positive Rds[on] tempco!) is a real trial and usually requires hand-matching for transconductance... Not something you want to have to do for anything that will be produced in volume! I expect the same issues with IGBTs except with the added bonus that most also have a negative tc for Vce[sat]. The exception here seems to be the NPT technology which trades off excellent paralleling (positive Vce[sat] tc) and low on drop for slower switching speed and lower voltage rating. Well, 600V is plenty for this application (192V is the practical maximum) and if I can switch 600A in 250nS that's plenty fast enough at 16kHz, so being able to do so in 77nS is just icing on the cake. Oh, and the module only costing $30 more than the equivalent amount of discretes (prior to derating for parallel operation) pretty much made it a no-brainer choice, I thought. Though, if I missed something that's what you folks are usually good for...
So, yeah, I was looking at somewhere between 15 and 20 of the 40A (@ 100C) Fairchild IGBTs in parallel for each side of the half bridge. I'm sure some day I'll find a use for the hundred I bought but for this app I think the Semikron module is the best choice.
Now, figuring out the most economical way to get rid of the waste heat without resorting to liquid cooling... I'm seriously considering embedding heat pipes into a standard aluminum extrusion heat sink... perhaps this should be a topic for another thread?
sreid - yeah, that's the nice thing about IGBTs compared to MOSFETs - IGBTs don't have an intrinsic (parasitic) freewheeling diode (FWD) so one has to be added to the package if needed. Thus, it is much easier to dope it properly for whatever optimizations are desired (low Vf, fast Tfr/Trr, etc.). The poor FWD in a MOSFET is pretty much along for the ride. That said, one not so good aspect of the Semikron module is that the Rth of the diode dice is higher than the Rth of the IGBT dice so the FWD ends up at a much higher below a certain duty cycle... The thermal modeling is driving me crazy as a result.