I got this piece of digitizer that is connected to the PC via USB. I would like to be able to change settings and stream data from this digitizer when need. I have the user manual which defines the registers of this digitizer and I also have the custom driver installed. SO there is no need to...
Copied from wiki about RS-232, "the standard requires the transmitter to use +12V and ?12V, but requires the receiver to distinguish voltages as low as +3V and -3V. Some manufacturers therefore built transmitters that supplied +5V and -5V and labeled them as "RS-232 compatible."
At what voltage...
Noob question.
Referring to the circuit attached, what is the purpose of having R276 between the gate and source of the transistor?
This is a typical voltage transfer circuit from microprocessor signal "TXDSNMP" (3.3V/0V) to "SNMPTXD" (+12V/-12V) signal. Thanks in advance.
I am trying to simulate the growth of thin oxide (between 2-5nm) with FLOOPS. So I type the following code/command (which is basic oxidation)
diffuse temp=1000<C> time=10.0<s> O2
How can I tell the software while model I want it to simulate? Obviously Deal-Grove model will be wrong in this...
There are two TiSi2: C54 (lower resistivity) and C49 (higher resistivity). In order to form C54 TiSi2, it has to go thru the intermediate C49 TiSi2 phase. C54 forms at higher temperature (800 degree C) while C49 forms at lower temperature (600 degree C).
SO WHY 2-STEP ANNEAL??
For one, using...
In the UNIX console, basically I just type
%floops floops_fps.cmd
which floops_fps.cmd is the example file comes with the program.
But it doesn't matter, even without the filemame, it still gave me the same error msg as I mentioned before.
I am new to this simulation software. Any help will be appreciated.
It keep giving me the following msg when I try to run floops. Anyone know why?
DATEX: No materials and variales found.
The material name "Default" was not found in DATEX !
For Titanium silicide, why does it require 2-step anneal instead of 1? I know the 1st anneal is at ~600 degree C to form the silicide and the 2nd at ~800 degree C to further lower the resistivity. But why can't it be done in just the 2nd step? I was told it has something to do with the weird...
