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Thanks for the suggestions.

I am neither rich nor eccentric. Rather, quite on the contrary :) I do not have many people to discuss the problem. I am trying out other options.

The contact was deposited by evaporating Ti/Au. Thanks for clarifying the SRA point. So you are suggesting that the metal might have diffused into the junction.

I cannot do a spreading resistance profile at the moment. However, I doubt if it can give me the doping profile description at a resolution of few nanometers. Moreover, I know from SIMS that the dopants are there. It is very unlikely that they are not activated. I would be interested to know if...

1e18 5e16(10nm layer) 3e17 Note that these are low bandgap materials.

Yeah, I checked the measurement with a standard diode. That is not a problem.

I am saying there is nothing wrong with the standard procedure of fabrication. Also, I did not burn the devices while testing. That does not mean "Nothing wrong with anything". Here are a few other things - 1> The doping profiles were not right during the structure growth creating no P-N...

I have fabricated similar devices (exactly same procedure) before many times. So there is no reason to suspect that there is something wrong with the procedure. Of course, there can be something wrong in one particular run, but then I have made several batches of this particular device and all...

That was a possibility. But I fabricated the devices again on a different sample and retested them with same results. So it is not for just one sample which I accidentally blew up.

I have a diode where the mesa structure has layers as follows- material 1(P+) thin region (10nm) of material 2(P-) different badgap material 1(N-) material 1 (N+). Overall it is a PIN structure. All materials are narrow bandgap, in mid IR region (~300meV). When I measure I-V, I get a...