I'm trying to increase my thickness uniformity in SiO2 deposition for a dry, high temperature oxidation process. My wafer profile is thin in the middle and thicker towards the outsides. The film is thin (~100-50 Angstroms) and the proces temperature is relatively low (~780). It appears to be a heat transfer problem as the outside of the wafer heats faster than the center (higher temperature, faster reaction). Anyone have any suggestions? Any help would be greatly appreciated!!
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