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Band gap + offset of InAlAs

Band gap + offset of InAlAs

(OP)
Hi guys,
I am trying to simulate roughly the band diagram of a III-V heterostructure using Snider's 1D Poisson solver before growing the layered structure. However, I cannot find much information about the alloy Al_x In_1-x As, even after 3 days and nights of intense research.
The program still misses the band-gap, band-offset and degeneracy as a function of Al-concentration. As I'll use only x=0.8, I'll be happy also with just the values for this concentration.

I could find out that there is a valley cross-over at ~0.65, thus reducing the gap for higher x. I think, degeneracy is equal to 1 for x<0.65 and equal to 6 for higher conc. Right? However, nothing about the band-offsets.

Does anyone knows, how Snider uses the band-offsets in the program? E.g. for InAs the input-file states a gap=0.37eV, with a band-offset of -0.66, which I do not understand.

Any help is highly appreciated.

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