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stress strain state after deposition processes

stress strain state after deposition processes

stress strain state after deposition processes

(OP)
Hello, I want to simulate the stress-strain state of silicon chip with thin dielectric membrane. The process of manufacturing includes:
1 substrate, 400 um
2 oxidizing, 0.5 um
3 nitride deposition, 0.5 um
4 Al deposition, 0.5 um
5 deep silicon etch, 400 um
The sizes of chip - rectangle 4x4 mm, membrane rectangle - 2mm. All dimensions are conditional

First I assume that stresses in membrane are too small to introduce strains in silicon and simulate only membrane (it is to be reviewed after i get the results).
Next, for this kind of problems Ansys documentation tells me to use the Element Birth & Death. But the membrane should consist of shell elements and I have no idea how to stack several layers of shell elements.
So I come to use of layered shells like shell91 or solsh190 and activating the TB,KINH like in the article http://www.padtinc.com/epubs/focus/common/focus.asp?I=39&P=article2.htm .
The question is - am I right, or missing something?

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